BS IEC 63068-1:2019 pdf download.Semiconductor devices - Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices
I Scope
This part of IEC 63068 gives a classification of defects in as-grown 4H-SiC (Silicon Carbide) epitaxial layers. The defects are classified on the basis of their crystallographic structures and recognized by non-destructive detection methods including bright-field CM (optical microscopy), PL (photoluminescence), and XRT (X-ray topography) images.
2 Normative references
The following documents are referred to in the text in such a way that some or all of their content constitutes requirements of this document. For dated references, only the edition cited applies. For undated references, the latest edition of the referenced document (including any amendments) applies.
There are no normative references in this document.
3 Terms and definitions
For the purposes of this document, the following terms and definitions apply.
ISO and IEC maintain terminological databases for use in standardization at the following addresses:
• IEC Electropedia: available at http://www.electropedia.org/
• ISO Online browsing platform: available at http://www.iso.org/obp
3.1 silicon carbide SiC
semiconductor crystal composed of silicon and carbon, which exhibits a large number of polytypes such as 3C, 4H, and 6H
Note 1 to entry: A symbol like 4H gives the number of periodic stacking layers (2, 3, 4,...) and the crystal symmetry (H = hexagonal. C = cubic) of each polytype.
3.2 3C-SiC
SiC crystal with zinc blende structure, in which three Si-C layers are periodically arranged along the <111> direction
3.3 4H-SiC
SiC crystal showing a hexagonal symmetry, in which four Si-C layers are periodically arranged along the crystallographic c-axis
Note 1 to entry: The crystal structure of 4H-SiC is similar to wurtzite with a unit cell having four periodical ccupied sites along the <0001> direction.
3.4 6H-SiC
SiC crystal showing a hexagonal symmetry, in which six Si-C layers are periodically arranged along the crystallographic c-axis
Note 1 to entry: The crystal structure of 6H-SiC is similar to wurtzite with a unit cell having six periodical occupied sites along the <0001> direction.
3.5 crystal plane
plane, usually denoted as (hkl)， representing the intersection of a plane with the a-, b- and C-axes of the unit cell at distances of 1/h, 1/k and 1/1, where h, k and I are integers
Note 1 to entry: The integers h, k and I are usually referred to as the Miller indices of a crystal plane.
Note 2 to entry: In 4H-SiC showing a hexagonal symmetry, four-digit indices are frequently used for planes (hkil).[SOURCE: ISO 24173:2009, 3.2, modified - Note 2 to entry has been entirely redrafted.]
3.6 crystal direction
direction, denoted as [uvw], representing a vector direction in multiples of the basis vectors describing the a，b- and c-axes
Note 1 to entry: In 4H-SiC showing a hexagonal symmetry, four-digit indices [uvw] are frequently used for crystal directions.
Note 2 to entry: Families of symmetrically equivalent directions are written by