BS IEC 60747-8:2000 pdf download.Semiconductor devices
1 Scope
This part of IEC 60747 gives standards for the following categories of field-effect transistors:
一type A: junction-gate type;
一type B: insulated-gate depletion type;
一type C: insulated-gate enhancement type.
2 Normative references
The following normative documents contain provisions which, through reference in this text,constitute provisions of this part of IEC 60747. For dated references， subsequent amendments to, or revisions of, any of these publications do not apply. However, parties to agreements based on this part of IEC 60747 are encouraged to investigate the possibility of
applying the most recent editions of the normative documents indicated below. For undated references, the latest edition of the normative document referred to applies. Members of IEC and ISO maintain registers of currently valid International Standards.
IEC 60747-1:1983, Semiconductor devices - Discrete devices and integrated circuits- Part 1:General
IEC 60747-7:2000, Semiconductor devices - Part 7: Bipolar transistors
4.1.3 junction-gate field-effect transistor (JFET)
a field-effect transistor in which:
一the source and drain regions are connected with each other by the channel region, all three being of the same conductivity type;
一a gate region adjacent to the channel has the opposite conductivity type, thus forming with source, channel and drain region a PN junction, and
一the gate-source voltage controls the conductivity of the conduction channel in the channel region by controlling the width of the gate space-charge region and hence also the remaining cross-section of the conduction channel
4.1.4 insulated-gate field-effect transistor (IGFET)
a field-effect transistor in which:
一one or more gate electrodes are electrically insulated from the body;
一the conductivity type of both the source and drain regions is opposite from that of the semiconductor body in which they are located;
一the principal current flows in a channel that is formed by an inversion layer connecting source and drain regions;
一the inversion layer is either already present at zero gate-source voltage or produced within
一the body at sufficiently high forward gate-source voltage by accumulation of the minority charge carriers of the body material, and
一the conductance of the channel is controlled by the gate-source voltage, which controls the electric field between gate electrode and the body and hence the amount of accumulated minority charge carriers
4.1.5 metal-oxide-semiconductor field-effect transistor (MOSFET)
an insulated-gate field-effect transistor in which the insulating layer between each gate electrode and the channel is oxide material
4.1.6 depletion-type field-effect transistor
a field-effect transistor in which an inversion layer present at the surface of the active semiconductor region causes an appreciable channel conductance that may be increased (decreased) by applying a forward (reverse) gate-source voltage.BS IEC 60747-8 pdf download.